Study on indium leaching control of waste LCD panels
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摘要:
作为一种稀散金属，铟在地壳中储存量少，废液晶显示器中的铟极具资源价值，开展废液晶面板铟高效浸出与杂质离子同步转移控制研究对于优化铟再生工艺有重要参考价值。以废液晶面板为试验材料，以硫酸为浸提剂，研究了硫酸浓度、浸出时间、液固比、反应温度对铟及铁、铝、硅浸出率的影响。结果表明：硫酸浓度对铟及铁、铝、硅浸出率的影响较大，控制适当的硫酸浓度可有效抑制杂质元素浸出，适当延长浸出时间有利于铟浸出，且对铁、铝、硅浸出的影响不大；铟浸提最优条件，硫酸浓度为15%，浸出时间为5 h，液固比为10，反应温度为20 ℃，该条件下铟浸出率达到98%。
Abstract:As a kind of rare and scattered metal, the amount of indium in the crust is little. The indium of waste liquid crystal display (LCD) panels has great resource value. It is of significant reference value for the optimization of the indium regeneration process of waste LCD panels to research on high-efficiency leaching of indium from waste LCD panels and synchronous transfer control of impurity ions. Waste LCD panels were used as test material and sulfuric acid as extractant to study the influences of sulfuric acid concentration, leaching time, liquid-solid ratio and reaction temperature on the leaching rate of indium, iron, aluminium and silicon. The results showed that the concentration of sulfuric acid had a great influence on the leaching of indium, iron, aluminium and silicon, the leaching of impurity elements could be inhibited effectively by controlling appropriate sulfuric acid concentration. Properly prolonging the leaching time was beneficial to the leaching of indium, but had little effect on the leaching of iron, aluminium and silicon. The optimum conditions of indium extraction were as follows: sulfuric acid concentration was 15%, the acid leaching time was 5 h, the liquid-solid ratio was 10, the reaction temperature was 20 ℃, and the indium extraction rate reached 98%.
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Key words:
- liquid crystal display panel /
- indium /
- acid leaching /
- leaching rate
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图 1 硫酸浓度对主要元素浸出率的影响
Figure 1. Effect of sulfuric acid concentration on leaching rates of main elements
图 2 浸出时间对主要元素浸出率的影响
Figure 2. Effect of leaching time on leaching rates of main elements
图 3 液固比对主要元素浸出率的影响
Figure 3. Effect of liquid-solid ratio on leaching rates of main elements
图 4 反应温度对主要元素浸出率的影响
Figure 4. Effect of reaction temperature on leaching rates of main elements
表 1 废液晶面板浸出试验方案
Table 1. Leaching experimental scheme of waste LCD panel
样品质量/g 搅拌速率/（r/min） 硫酸浓度/% 浸出时间/h 液固比 反应温度/℃ 2 350 5、10、15、20、30 1、2、3、4、5、6 3、5、10、15、20 20、40、60、80 
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[1] 李华琳, 刘海龙, 李文龙, 等.TFT-LCD废弃面板的资源化处理[J]. 科技与创新,2019(20):90-91. [2] 阮久莉, 郭玉文, 乔琦.废液晶显示器资源化技术进展及问题与对策[J]. 环境科学与技术,2016,39(1):38-43.RUAN J L, GUO Y W, QIAO Q. Situation and problems of treatment of waste liquid crystal displays and the countermeasures[J]. Environmental Science & Technology,2016,39(1):38-43. [3] 郭玉文, 刘景洋, 乔琦, 等.废薄膜晶体管液晶显示器处理与管理[J]. 环境工程技术学报,2011,1(2):168-172. doi: 10.3969/j.issn.1674-991X.2011.02.028GUO Y W, LIU J Y, QIAO Q, et al. Disposal and management of waste TFT-LCD[J]. Jourmal of Environmental Engineering Technology,2011,1(2):168-172. doi: 10.3969/j.issn.1674-991X.2011.02.028 [4] 庄绪宁, 宋小龙, 白建峰, 等.我国废弃液晶显示器产生量预测及管理策略分析[J]. 环境工程技术学报,2014,4(6):489-495. doi: 10.3969/j.issn.1674-991X.2014.06.009ZHUANG X N, SONG X L, BAI J F, et al. Generation estimation of waste liquid crystals (LCDs) in China and analysis of countermeasures[J]. Jourmal of Environmental Engineering Technology,2014,4(6):489-495. doi: 10.3969/j.issn.1674-991X.2014.06.009 [5] DANG M T, LEFEBVRE J, WUEST J D. Recycling indium tin oxide (ITO) electrodes used in thin-film devices with adjacent hole-transport layers of metal oxides[J]. ACS Sustainable Chemistry & Engineering,2015,3(12):3373-3381. [6] 杨东梅. 废液晶显示器面板中铟的回收试验研究[D]. 成都: 西南交通大学, 2012. [7] ROCCHETTI L, AMATO A, FONTI V, et al. Cross-current leaching of indium from end-of-life LCD panels[J]. Waste Management,2015,42:180-187. doi: 10.1016/j.wasman.2015.04.035 [8] 王辛影. 废弃液晶显示器中铟的回收工艺及关键技术研究[D]. 天津: 天津大学, 2014. [9] 刘猛, 杨飞, 黄文孝, 等.从ITO靶材中提取高纯度铟实验研究[J]. 山东化工,2017,46(6):18-19. doi: 10.3969/j.issn.1008-021X.2017.06.005LIU M, YANG F, HUANG W X, et al. Extracting high purity indium from the ITO target materials[J]. Shandong Chemical Industry,2017,46(6):18-19. doi: 10.3969/j.issn.1008-021X.2017.06.005 [10] 聂耳, 罗兴章, 郑正, 等.液晶显示器液晶处理与铟回收技术[J]. 环境工程学报,2008,2(9):1251-1254.NIE E, LUO X Z, ZHENG Z, et al. Treatment of liquid crystal and recovery of indium from liquid crystal display[J]. Chinese Journal of Environmental Engineering,2008,2(9):1251-1254. [11] 嵇佳伟, 关杰, 苏瑞景.采用微波焙烧预处理-硫酸浸出工艺从废弃液晶面板中回收铟[J]. 湿法冶金,2018,37(3):202-206.JI J W, GUAN J, SU R J. Recovery of indium from waste liquid crystal panel by microwave roasting-sulfuric acid leaching[J]. Hydrometallurgy of China,2018,37(3):202-206. [12] ZHANG K H, LI B, WU Y F, et al. Recycling of indium from waste LCD: a promising non-crushing leaching with the aid of ultrasonic wave[J]. Waste Management,2017,64:236-243. doi: 10.1016/j.wasman.2017.03.031 [13] WANG X Y, LU X B, ZHANG S T. Study on the waste liquid crystal display treatment: focus on the resource recovery[J]. Journal of Hazardous Materials,2013,244/245:342-347. doi: 10.1016/j.jhazmat.2012.11.059 [14] VIROLAINEN S, IBANA D, PAATERO E. Recovery of indium from indium tin oxide by solvent extraction[J]. Hydrometallurgy,2011,107(1/2):56-61. [15] 杨东梅, 郭玉文, 乔琦, 等.废TFT-LCD面板中主要元素溶出特性[J]. 环境科学研究,2012,25(4):431-435.YANG D M, GUO Y W, QIAO Q, et al. Dissolution properties of the main elements of waste TFT-LCD panels[J]. Research of Environmental Sciences,2012,25(4):431-435. [16] 蒲丽梅, 杨东梅, 郭玉文.电感耦合等离子体发射光谱在分析废液晶显示器面板主要元素中的应用[J]. 环境污染与防治,2012,34(5):76-78,82. doi: 10.3969/j.issn.1001-3865.2012.05.016PU L M, YANG D M, GUO Y W. Analyzing the main elements in waste TFT-LCD panel by using inductively coupled plasma atomic emission spectrometry[J]. Environmental Pollution & Control,2012,34(5):76-78,82. doi: 10.3969/j.issn.1001-3865.2012.05.016 [17] FOLEY C L, KRUGER J, BECHTOLDT C J. Electron diffraction studies of active, passive, and transpassive oxide films formed on iron[J]. Journal of the Electrochemical Society,1967,114(10):994. doi: 10.1149/1.2424199 [18] 贺山明, 吴鑫, 梁勇, 等.高硅富铟渣氧压酸浸过程中浸铟沉硅的研究[J]. 有色金属(冶炼部分),2020(1):56-59.HE S M, WU X, LIANG Y, et al. Study on indium leaching and silicon precipitation from indium-rich high-silicon bearing slag during oxygen pressure acid leaching[J]. Nonferrous Metals (Extractive Metallurgy),2020(1):56-59. [19] 李遥. 废旧LCD中铟的草酸反应器浸出工艺与扰动机制研究[D]. 广州: 华南理工大学, 2020. [20] 马恩. 废弃液晶面板有机材料的热解机制及铟的提取[D]. 上海: 上海交通大学, 2014. [21] 庄绪宁, 贺文智, 李光明, 等.废液晶显示屏的环境风险与资源化策略[J]. 环境污染与防治,2010,32(5):97-99. doi: 10.3969/j.issn.1001-3865.2010.05.023ZHUANG X N, HE W Z, LI G M, et al. The environmental risks and resource reuse of waste LCDs[J]. Environmental Pollution and Control,2010,32(5):97-99. □ doi: 10.3969/j.issn.1001-3865.2010.05.023 -
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